MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switchin...
Fairchild's Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
| Symbol | Description | FMG2G50US60 | Units |
| VCES | Collector-Emitter Voltage | 600 | V |
| VGES | Gate-Emitter Voltage | +20 | V |
| IC | Collector Current@ TC = 25°C | 50 | A |
| ICM(1) | Pulsed Collector Current | 100 | A |
| IF | Diode Continuous Forward Current @ TC = 100°C | 50 | A |
| IFM | Diode Maximum Forward Current | 100 | A |
| TSC | Short Circuit Withstand Time @ TC = 100°C | 10 | US |
| PD | Maximum Power Dissipation @ TC = 25°C | 250 | W |
| TJ | Operating Junction Temperature | -40 to +150 | °C |
| Tstg | Storage Temperature Range | -40 to +125 | °C |
| Viso | Isolation Voltage @ AC 1minute | 2500 | V |
| Mounting Torque |
Power Terminals Screw : M5 | 2.0 | N.m |
| Mounting Screw : M5 | 2.0 | N.m |
FMG2G50US60
PDF/DataSheet Download
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