FMM300-0055P

Input Capacitance (Ciss) @ Vds: -
Series: -
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Power - Max: -
Drain to Source Voltage (Vdss): 55V
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: IXYS
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?
Current - Continuous Drain (Id) @ 25° C: 300A
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Gate Charge (Qg) @ Vgs: 172nC @ 10V


Features:

• trench MOSFET
   - very low on state resistance RDSon
   - fast switching
• ISOPLUS i4   -PACTM package
   - isolated back surface
   - low coupling capacity between pins and heatsink
   - enlarged creepage towards heatsink
   - application friendly pinout
   - low inductive current path
   - high reliability
   - industry standard outline
   - UL registered, E 72873


Application

• automotive
   - AC drives    - starter generator for 12/14 V etc.
   - choppers    - replacing series resistors for DC drives, heating etc.
   - DC   -DC converters    - between 12V and 42V system etc.
   - electronic switches    -replacing relays and fuses
• power supplies
   - DC   -DC converters
   - solar inverters
   - converters for fuel cells
• battery supplied systems
   - choppers or inverters for drives in hand held tools
   - battery chargers


Specifications

Symbol               Conditions                       Maximum Ratings
V_DSS                  T_VJ = 25°C to T_VJmax        55                  V
V_GS                                                            ±20                 V
I_D25                  T_C = 25°C                        300                  A
I_D90                  T_C = 90°C                        220                  A
I_F25                  (body diode) T_C = 25°C   240                   A
I_F90                  (body diode) T_C = 90°C   150                   A