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Part Number: FMS2016QFN-1

 

 

 

 

Description: The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenideanten...


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FMS2016QFN-1 General Description


The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications.  The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications.   The FMS2016QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.
 
 

FMS2016QFN-1 Maximum Ratings

Parameter Symbol Absolute Maximum
Max Input Power Pin +38dBm
Control Voltage V ctrl +5V
Operating Temp T oper -40°C to +100°C
Storage Temp T stor -55°C to +150°C

FMS2016QFN-1 Features

3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high isolation:  >29dB at 1.8GHz
Very low Insertion loss: 0.65dB at 1.8GHz
Very low control current

FMS2016QFN-1 Connection Diagram

FMS2016QFN-1  Connection Diagram

FMS2016QFN-1 datasheet

FMS2016QFN-1
PDF/DataSheet Download

  • Datasheet: FMS2016QFN-1
  • File Size: 204198 KB
  • Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
  • Click here to Download

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