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FP100

Clamp Multimeters & Accessories FUSE 10A 1000V 2PK CERAMIC 33-34XR

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SeekIC No. : 002774574 Detail

FP100: Clamp Multimeters & Accessories FUSE 10A 1000V 2PK CERAMIC 33-34XR

FP100 Data Sheet

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Part Number:
FP100
Mfg:
Meterman
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Ranging : 1000 V    

Description

Accuracy :
Ranging : 1000 V


Features:

·14 dBm P-1dB at 12 GHz
·9 dB Power Gain at 12 GHz
·3.0 dB Noise Figure at 12 GHz


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory.
·Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output Power @
1 dB Compression
P1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
13
14
dBm
Power Gain @
1 dB Compression
G1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
8
9
dB
Maximum Available Gain
MAG
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
14.5
15.5
dB
Noise Figure
NF
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
3.0
dB
Power-Added Efficiency
f = 12 GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 15.5 dBm
20
25
%
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
15
30
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
15
20
mS
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 1 mA
-0.50
-2.5

V
Gate-Drain Breakdown
Voltage Magnitude
VBDGD
IGS = 1 mA
8
10.5
V
Gate-Source Breakdown
Voltage Magnitude
VBDGS
IGS = 1 mA
7
10
V
Gate-Source Leakage
Current Magnitude
IGSL
VGS = -5 V
4
10
A



Description

The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.

FP100 applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications.




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