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FP303

Features: · Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.· The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package.PinoutSpecifications Parameter Symbo Conditions Ratings Unit [T...

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SeekIC No. : 004342976 Detail

FP303: Features: · Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.· The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are place...

FP303 Data Sheet

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Part Number:
FP303
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.
· The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package.






Pinout

Connection Diagram






Specifications

Parameter
Symbo
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Votage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
collector current
IC
2
A
Collector Current(Pulse)
ICP
4
A
Base current
IB
400
mA
Collector Dissipation
PC
Mounted on ceramic board (250mm2×0.8mm)
0.8
W
Junction Temperature
TJ
150
°C
[SBD]
Repetitive Peak Reverse Volatage
VRRM
50
V
Non-repetitive Peak Reverse Surge Voltage
VRSM
55
V
Average-rectified Current
IO
500
Am
Surge Forward Current
IFSM
50HZ sine wav,1cycle
5
A
Junction Temperature
Tj
-55to+125
°C
Storage Temperature
Tstg
-55to+125
°C


Absolute maximum ratings
VCEO [V] 50
IC [A] 2
PC [W] 0.8
When mounted on ceramic substrate (250mm²×0.8mm) 1unit
VRRM [V] 50
IO [A] 0.5
Electrical characteristics
hFE min 140
hFE max 560
VCE [V] 2
IC [A] 0.1
VCE (sat) typ [V] 0.15
VCE (sat) max [V] 0.4
IC [A] 1
IB [mA] 50
VF max [V] 0.55
IF [A] 0.5
IR max [mA] 0.05
VR [V] 25
trr max [nS] 10
IF [A] 0.1





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