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FP750SOT343

Features: ·0.5 dB Noise Figure at 2 GHz·21 dBm P-1dB 2 GHz·17 dB Power Gain at 2 GHz·33 dBm IP3 at 2 GHz·45% Power-Added-EfficiencySpecifications Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 180 ...

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FP750SOT343: Features: ·0.5 dB Noise Figure at 2 GHz·21 dBm P-1dB 2 GHz·17 dB Power Gain at 2 GHz·33 dBm IP3 at 2 GHz·45% Power-Added-EfficiencySpecifications Parameter Symbol Test Conditions Mi...

FP750SOT343 Data Sheet

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Part Number:
FP750SOT343
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

·0.5 dB Noise Figure at 2 GHz
·21 dBm P-1dB 2 GHz
·17 dB Power Gain at 2 GHz
·33 dBm IP3 at 2 GHz
·45% Power-Added-Efficiency


Specifications

Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
180
220
265
mA
Power at 1-dB Compression
P-1dB
f=2GHz; VDS = 3.3 V; IDS = 110mA
20
21
dBm
Power Gain at 1-dB Compression
G-1dB
f=2GHz; VDS = 3.3 V; IDS = 110mA
16
17
dB
Power-Added Efficiency
PAE
f=2GHz; VDS = 3.3 V;
IDS = 110mA; POUT = 21 dBm
45
%
Noise Figure
NF
f=2GHz; VDS = 3.3V; 40mA
0.4
dB
f=2GHz; VDS = 3.3V; IDS = 60mA
0.5
dB
f=2GHz; VDS = 3.3V; 110mA
0.7
dB
Output Third-Order Intercept Point
IP3
VDS = 3.3V; IDS = 110mA
33
dBm
Transconductance
GM
VDS = 2 V; VGS = 0 V
170
220
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
5
35
A
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 2 mA
-1.2
V
Gate-Source Breakdown
Voltage Magnitude
VBDGS
IGS = 2 mA
10
12
V
Gate-Drain Breakdown
Voltage Magnitude
VBDGD
IGD = 2 mA
10
13
V



Description

The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The FP750's active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package.

The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for PCS and GSM base station front-ends.




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