IGBT Transistors 600V -30A IGBT SMART POWER M
FPDB30PH60: IGBT Transistors 600V -30A IGBT SMART POWER M
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| Collector-Emitter Saturation Voltage : | 2.4 V | Power Dissipation : | 83 W |
| Packaging : | Tube |
| Item |
Symbol |
Condition |
Rating |
Unit |
| Supply Voltage |
Vi |
Applied between R-S |
264 |
VRMS |
| Supply Voltage (Surge) |
V i(Surge) |
Applied between R-SApplied between P- N |
500 |
V |
| Output Voltage |
VPN |
Applied between P- N |
450 |
V |
| Output Voltage (Surge) |
VPN(Surge) |
500 |
V | |
| Collector-emitter Voltage |
VCES |
TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz |
600 |
V |
| Input Current (100% Load) |
Ii |
TC < 95°C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive |
20 |
A |
| Input Current (125% Load) |
Ii(125%) |
TC = 25°C per One IGBT |
25 |
A |
| Collector Dissipation |
PC |
TC < 125°C |
83 |
W |
| Power Rating of Shunt Resistor |
PRSH |
(Note 1) |
2 |
W |
| Operating Junction Temperature |
TJ |
-20 ~ 125 |
°C |
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to T J(ave) 125°C (@TC 100°C)
FPDB30PH60 is an advanced smart power module of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. FPDB30PH60 combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function.
| Technical/Catalog Information | FPDB30PH60 |
| Vendor | Fairchild Semiconductor |
| Category | Integrated Circuits (ICs) |
| Applications | - |
| Current - Supply | 26mA |
| Voltage - Supply | 20V |
| Package / Case | SPM27GA |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FPDB30PH60 FPDB30PH60 |