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Part Number: FPM2750QFN
Description: The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specific...
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FPM2750QFN
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DataSheet
General Description
FPM2750QFN General Description
The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic\ 0.25m process ensures class-leading noise\ performance. The use of a small footprint plastic package allows for a cost effective total system implementation.
FPM2750QFN Maximum Ratings
| PARAMETER | SYMBOL | TEST CONDITIONS | ABSOLUTE MAXIMUM |
| Drain-Source Voltage | VDS | 6V | |
| Gate-Source Voltage | VGS | -3V | |
| Drain-Source Current | IDS | For VDS < 2V | IDSS |
| Gate Current | IG | Forward or reverse current | 7.5mA |
| RF Input Power (Note 2) | PIN | Under any acceptable bias state | 150mW |
| Channel Operating Temperature | TCH | Under any acceptable bias state | 175°C |
| Storage Temperature | TSTG | Non-Operating Storage | -55°C to 150°C |
| Total Power Dissipation (Note 3) | PTOT | See De-Rating Note below | 1W |
| Gain Compression | Comp. | Under any bias cond | 5dB |
1. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may
cause permanent damage to the device
2. RF Input must be further limited if input VSWR > 2.5:1
3. Total Power Dissipation is defined as: PTOT = PDC + PIN POUT
where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
PTOT = (150 TCASE ) / JC W
where TCASE = Temperature of the thermal pad on the underside of the package
4. JC increases linearly from 124°C/W at a TCASE of 22°C to 145°C/W at a TCASE of 145°C
5. Information on the mounting of QFN style packages for optimum thermal performance is available on request.
FPM2750QFN Features
FEATURES:
• Balanced low noise amplifier module
• Excellent Noise figure: 0.4dB at 1850MHz
• Low drive current: 40mA typical (3.0V)
• Combined IP3: 36dBm (100mA)
• Combined P1dB: 23dBm (100mA)
• Small footprint: 4mm x 4mm x 0.9mm QFN
• RoHS compliant: (Directive 2002/95/EC
• Balanced low noise amplifier module
• Excellent Noise figure: 0.4dB at 1850MHz
• Low drive current: 40mA typical (3.0V)
• Combined IP3: 36dBm (100mA)
• Combined P1dB: 23dBm (100mA)
• Small footprint: 4mm x 4mm x 0.9mm QFN
• RoHS compliant: (Directive 2002/95/EC
FPM2750QFN Typical Application
• Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
• High intercept-point LNAs
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
• High intercept-point LNAs
fpm-07pg
PDF/DataSheet Download
- Datasheet: fpm-07pg
- File Size: 368744 KB
- Manufacturer: Fujikura
- Click here to Download
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