FQA34N20L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-3P


Features:

* 34A, 200V, R _DS(on) = 0.075  @V_GS  = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical  52 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating 
* Low level gate drive requirement allowing direct
   operation from logic drivers


Specifications

Symbol	Parameter	FQA34N20L	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	34	A
		21	A
IDM	Drain Current - Pulsed             (Note 1)	136	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	640	mJ
IAR	Avalanche Current                   (Note 1)	34	A
EAR	Repetitive Avalanche Energy         (Note 1)	21	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	210	W
		1.67	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA34N20L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology FQA34N20L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA34N20L is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.

Parameters:

Technical/Catalog Information	FQA34N20L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	75 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds	3900pF @ 25V
Power - Max	210W
Packaging	Tube
Gate Charge (Qg) @ Vgs	72nC @ 5V
Package / Case	TO-3P
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA34N20L FQA34N20L