FQA5N90

MOSFET 900V N-Channel QFET

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SeekIC No. : 00159977 Detail

FQA5N90: MOSFET 900V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQA5N90
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.8 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 2.3 Ohms


Features:

• 5.8A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FQA5N90
Units
VDSS Drain-Source Voltage
900
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
5.8
A
3.67
A
IDM Drain Current - Pulsed (Note 1)
23.2
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
660
mJ
IAR Avalanche Current (Note 1)
5.8
A
EAR Repetitive Avalanche Energy (Note 1)
18.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
185
W
1.47
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQA5N90 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQA5N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA5N90 is well suited for high efficiency switch mode power supply.




Parameters:

Technical/Catalog InformationFQA5N90
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs2.3 Ohm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds 1550pF @ 25V
Power - Max185W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA5N90
FQA5N90



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