FQA62N25C

MOSFET 250V N-Channel Adv Q-FET C-Series

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SeekIC No. : 00146741 Detail

FQA62N25C: MOSFET 250V N-Channel Adv Q-FET C-Series

floor Price/Ceiling Price

US $ 2.27~3.47 / Piece | Get Latest Price
Part Number:
FQA62N25C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.47
  • $2.79
  • $2.51
  • $2.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 62 A
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.035 Ohms


Features:

* 62A, 250V, RDS(on) = 0.035 @VGS  = 10 V
* Low gate charge ( typical  100 nC)
* Low Crss ( typical  63.5 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
 


Specifications

Symbol
Parameter
FQA62N25C
Units
VDSS
Drain-Source Voltage
250
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
62
A
39
A
IDM
Drain Current - Pulsed             (Note 1)
248
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
2300
mJ
IAR
Avalanche Current                   (Note 1)
62
A
EAR
Repetitive Avalanche Energy         (Note 1)
29.8
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
5.5
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
298
W
2.38
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+150
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQA62N25C field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQA62N25C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA62N25C is well suited for high efficiency switching DC/DC converters and switch mode power supplies. 


Parameters:

Technical/Catalog InformationFQA62N25C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs35 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds 6280pF @ 25V
Power - Max298W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA62N25C
FQA62N25C



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