Position: Home  > All Categories> Integrated Circuits (ICs) > FQB7N60

FQB7N60

Features: • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 16 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB6N60C / FQI6N60C Units VDSS ...

product image

FQB7N60 Picture
See larger image
SeekIC No. : 004343156 Detail

FQB7N60: Features: • 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 16 pF)• Fast switching• 100% avalanche tested• Impr...

FQB7N60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB7N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB6N60C / FQI6N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
7.4
A
4.7
A
IDM Drain Current - Pulsed (Note 1)
29.6
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
580
mJ
IAR Avalanche Current (Note 1)
7.4
A
EAR Repetitive Avalanche Energy (Note 1)
14.2
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
142
W
1.14
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQB7N60 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB7N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB7N60 is well suited for high efficiency switch mode power supply.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Optical Inspection Equipment
AA924
A21K4B
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Test Equipment
TOP853
TOP2005
Circuit Protection
A50QS75-4Y
F-17*77
View more