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MFG:FAIRC  Package Cooled:TO-263(D2PAK)  D/C:09+  

FQB7N60 Product Image

FQB Series Datasheet download

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Part Number: FQB7N60

 

MFG: FAIRC

Package Cooled: TO-263(D2PAK)

D/C: 09+

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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FQB7N60 General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQB7N60 Maximum Ratings

Symbol Parameter
FQB6N60C / FQI6N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
7.4
A
4.7
A
IDM Drain Current - Pulsed (Note 1)
29.6
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
580
mJ
IAR Avalanche Current (Note 1)
7.4
A
EAR Repetitive Avalanche Energy (Note 1)
14.2
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
142
W
1.14
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C

FQB7N60 Features

• 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQB7N60 datasheet

FQB7N60
PDF/DataSheet Download

  • Datasheet: FQB7N60
  • File Size: 605843 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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