Features: • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 26.5 nC)• Low Crss ( typical 45.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB9N25C / FQI9N25C Units ...
FQB9N25C: Features: • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 26.5 nC)• Low Crss ( typical 45.5 pF)• Fast switching• 100% avalanche tested•...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
FQB9N25C / FQI9N25C |
Units |
VDSS | Drain-Source Voltage |
250 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8.8 |
A |
5.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
35.2 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
285 |
mJ |
IAR | Avalanche Current (Note 1) |
8.8 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.4 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
74 |
W | |
0.59 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB9N25C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB9N25C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB9N25C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.