MFG:TO-263(D2PAK) Package Cooled:7850 D/C:FAIRCHILD
MFG: TO-263(D2PAK)
Package Cooled: 7850
D/C: FAIRCHILD
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
|
Symbol |
Characteristic |
FQB9N50CF |
Units |
|
VDSS |
Drain-to-Source Voltage |
500 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
9 |
A |
| Continuous Drain Current (TC=100 ) |
5.7 |
A | |
|
IDM |
Drain Current - Pulsed(Note 1) |
36 |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
300 |
mJ |
|
IAR |
Avalanche Current(Note 1) |
5 |
A |
|
EAR |
Repetitive Avalanche Energy(Note 1) |
9.6 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt(Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC=25 ) - Derate above 25°C |
173 1.38 |
W W/ |
|
TJ , TSTG |
Operating and Storage Temperature Range |
- 55 to +150 |
|
|
TL |
Maximum Lead Temp. for Soldering Purposes,1/8` from case for 5 seconds |
300 |
FQB9N50CFTM
PDF/DataSheet Download
These N-Channel enhancement mode power FQB9N50Cfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology FQB9N50Chas been especially tailored to minimize on-state resistance, provide superior...
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These N-Channel enhancement mode power FQB9N25Cfield effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology FQB9N25Chas been especially tailored to minimize on-state resistance, provide superior...
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