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FQB9N50CFTM

MOSFET 500V N-CH MOSFET

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SeekIC No. : 00163686 Detail

FQB9N50CFTM: MOSFET 500V N-CH MOSFET

FQB9N50CFTM Data Sheet

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Part Number:
FQB9N50CFTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.7 Ohms


Parameters:

Technical/Catalog InformationFQB9N50CFTM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs850 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 1030pF @ 25V
Power - Max173W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB9N50CFTM
FQB9N50CFTM
FQB9N50CFTMDKR ND
FQB9N50CFTMDKRND
FQB9N50CFTMDKR



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