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FQD4P25TM_WS

MOSFET 250V 3.1A 2.1Ohm P-Channel

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SeekIC No. : 00156354 Detail

FQD4P25TM_WS: MOSFET 250V 3.1A 2.1Ohm P-Channel

FQD4P25TM_WS Data Sheet

floor Price/Ceiling Price

US $ .18~.21 / Piece | Get Latest Price
Part Number:
FQD4P25TM_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1600
  • 1600~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.21
  • $.19
  • $.19
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.1 A
Resistance Drain-Source RDS (on) : 2.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 2.1 Ohms
Continuous Drain Current : 3.1 A
Drain-Source Breakdown Voltage : - 250 V


Parameters:

Technical/Catalog InformationFQD4P25TM_WS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C3.1A
Rds On (Max) @ Id, Vgs2.1 Ohm @ 1.55A, 10V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD4P25TM_WS
FQD4P25TM_WS



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