FQD5N60CTM, US $ .34-.5 , Fairchild Semiconductor, FQD5N60CTM DataSheet download, circuit diagram from SeekIC.com

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FQD5N60CTM: MOSFET 600V N-Channel Adv Q-FET C-Series

FQD5N60CTM Data Sheet

US $ .34~.5 / Piece | Get Latest Price

Part Number:: FQD5N60CTM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.8 A
Resistance Drain-Source RDS (on) :	2.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 2.5 Ohms

Parameters:

Technical/Catalog Information	FQD5N60CTM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	670pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD5N60CTM FQD5N60CTM FQD5N60CTMCT ND FQD5N60CTMCTND FQD5N60CTMCT

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