MOSFET 600V N-Channel Adv Q-FET C-Series
FQD5N60CTM: MOSFET 600V N-Channel Adv Q-FET C-Series
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.8 A | ||
| Resistance Drain-Source RDS (on) : | 2.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Reel |
| Technical/Catalog Information | FQD5N60CTM |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD5N60CTM FQD5N60CTM FQD5N60CTMCT ND FQD5N60CTMCTND FQD5N60CTMCT |