MOSFET 200V P-Channel QFET
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | - 3.7 A | ||
| Resistance Drain-Source RDS (on) : | 1.4 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Reel |
| Technical/Catalog Information | FQD5P20TM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 3.7A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.85A, 10V |
| Input Capacitance (Ciss) @ Vds | 430pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD5P20TM FQD5P20TM |