FQD7N10LTM, US $ .22-.33 , Fairchild Semiconductor, FQD7N10LTM DataSheet download, circuit diagram from SeekIC.com

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FQD7N10LTM: MOSFET 100V N-Ch QFET Logic Level

FQD7N10LTM Data Sheet

US $ .22~.33 / Piece | Get Latest Price

Part Number:: FQD7N10LTM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/30

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What is this?

FQD7N10 evaluate
Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 5.8 nC)&...
FQD7N10L evaluate
Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 4.6 nC)&...
FQD7N10LTF evaluate
MOSFET 100V N-Ch QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5.8 A
Resistance Drain-Source RDS (on) :	0.35 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-252
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 0.35 Ohms

Parameters:

Technical/Catalog Information	FQD7N10LTM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	290pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD7N10LTM FQD7N10LTM

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