FQD9N08

Features:

• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical  13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQT7N10	Units
VDSS	Drain-Source Voltage(Note 2)	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C)	7.4	A
		4.68	A
IDM	Drain Current - Pulsed (Note 1)	29.6	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy	55	mJ
IAR	Avalanche Current (Note 1)	7.4	A
EAR	Repetitive Avalanche Energy (Note 1)	2.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C)	2.5	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	25	W
		0.2	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQD9N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQD9N08 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQD9N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.