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FQI11N40C

Features: • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 85pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB11N40C / FQI11N40C Units V...

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SeekIC No. : 004343241 Detail

FQI11N40C: Features: • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 85pF)• Fast switching• 100% avalanche tested• Im...

FQI11N40C Data Sheet

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Part Number:
FQI11N40C
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB11N40C / FQI11N40C
Units
VDSS Drain-Source Voltage
400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
10.5
A
6.6
A
IDM Drain Current - Pulsed (Note 1)
42
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
360
mJ
IAR Avalanche Current (Note 1)
11
A
EAR Repetitive Avalanche Energy (Note 1)
13.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
4.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
135
W
1.07
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQI11N40C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQI11N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI11N40C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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