FQI17N08LTU

MOSFET 80V N-Channel QFET Logic Level

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FQI17N08LTU: MOSFET 80V N-Channel QFET Logic Level

floor Price/Ceiling Price

US $ .34~.71 / Piece | Get Latest Price
Part Number:
FQI17N08LTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.71
  • $.59
  • $.42
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 80 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 16.5 A


Parameters:

Technical/Catalog InformationFQI17N08LTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C16.5A
Rds On (Max) @ Id, Vgs100 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds 520pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs11.5nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI17N08LTU
FQI17N08LTU



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