Features: • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 40 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol Pa...
FQI30N06: Features: • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 40 pF)• Fast switching• 100% avalanche tested• Impro...
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Features: • 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V• Low gate charge ( typical 41...
| Symbol | Parameter |
FQB30N06 / FQI30N06 |
Units |
| VDSS | Drain-Source Voltage |
60 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
30 |
A |
|
21.3 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
120 |
A |
| VGSS | Gate-Source Voltage |
±25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
280 |
mJ |
| IAR | Avalanche Current (Note 1) |
30 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.9 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
79 |
W | |
|
0.53 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQI30N06 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQI30N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQI30N06 is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.