FQI7N10TU

MOSFET N-CH/100V/7.3A/0.35OHM

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FQI7N10TU: MOSFET N-CH/100V/7.3A/0.35OHM

floor Price/Ceiling Price

US $ .27~.56 / Piece | Get Latest Price
Part Number:
FQI7N10TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.56
  • $.47
  • $.34
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 7.3 A
Packaging : Tube
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.28 Ohms


Parameters:

Technical/Catalog InformationFQI7N10TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs350 mOhm @ 3.65A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max3.75W
PackagingTube
Gate Charge (Qg) @ Vgs7.5nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQI7N10TU
FQI7N10TU



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