FQI7P06TU Selling Leads, Price trend , Fairchild Semiconductor, FQI7P06TU DataSheet download, circuit diagram from SeekIC.com

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FQI7P06TU: MOSFET 60V P-Channel QFET

FQI7P06TU Data Sheet

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Part Number:: FQI7P06TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/4

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Recent History
What is this?

FQI70N08 evaluate
Features: • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V• Low gate charge ( typical 75...
FQI70N08TU evaluate
MOSFET
FQI70N10 evaluate
Features: • 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V• Low gate charge ( typical 8...

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	- 7 A
Resistance Drain-Source RDS (on) :	0.41 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.41 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : - 7 A

Parameters:

Technical/Catalog Information	FQI7P06TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	410 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	295pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.2nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI7P06TU FQI7P06TU

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FQI7P06TU

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