FQI8P10TU, US $ .3-.62 , Fairchild Semiconductor, FQI8P10TU DataSheet download, circuit diagram from SeekIC.com

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FQI8P10TU: MOSFET P-CH/100V/8A/0.53OHM

FQI8P10TU Data Sheet

US $ .3~.62 / Piece | Get Latest Price

Part Number:: FQI8P10TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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25~100
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Upload time: 2024/4/27

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Recent History
What is this?

FQI85N06 evaluate
Features: • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V• Low gate charge ( typically ...
FQI8N25 evaluate
Features: • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V• Low gate charge ( typical 1...
FQI8N60C evaluate
Features: • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V• Low gate charge ( typical 28...

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 100 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 8 A
Resistance Drain-Source RDS (on) :	0.53 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Package / Case : I2PAK
Continuous Drain Current : - 8 A
Drain-Source Breakdown Voltage : - 100 V

Parameters:

Technical/Catalog Information	FQI8P10TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	530 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 25V
Power - Max	3.75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQI8P10TU FQI8P10TU

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