MFG:TO-264 Package Cooled:7850 D/C:FAIRCHILD
MFG: TO-264
Package Cooled: 7850
D/C: FAIRCHILD
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology.
| Symbol | Parameter |
FQL40N50F |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
40 |
A |
|
25 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
160 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1800 |
mJ |
| IAR | Avalanche Current (Note 1) |
40 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
46 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
20 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
460 |
W |
|
3.7 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQL40N50F
PDF/DataSheet Download
These N-Channel enhancement mode power FQL40N50field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology FQL40N50has been especially tailored to minimize on-state resistance, provide superior...
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