Purchase FQNL1N50B, In-stock FQNL1N50B From SeekIC.
Part Number: FQNL1N50B
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
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FQNL1N50B
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DataSheet
General Description
FQNL1N50B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
FQNL1N50B Maximum Ratings
| Symbol | Parameter |
FQNL1N50B |
Units |
| VDSS | Drain-Source Voltage |
500 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
0.27 |
A |
|
0.17 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
1.08 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
1800 |
mJ |
| IAR | Avalanche Current (Note 1) |
0.27 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
0.15 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
1.5 |
W |
|
0.012 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FQNL1N50B Features
• 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• Improved dv/dt capability
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• Improved dv/dt capability
FQNL1N50B
PDF/DataSheet Download
- Datasheet: FQNL1N50B
- File Size: 635040 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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