FQP60N03L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms


Features:

• 60A, 30V. R_DS(on) = 0.0135 @V_GS = 10 V
• Low gate charge ( typical 18.5 nC)
• Low Crss ( typical 155 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP60N03L	Units
VDSS	Drain-Source Voltage	30	V
ID	Drain Current - Continuous (TC = 25) (Note 6) - Continuous (TC = 100) (Note 6)	60	A
		42.5	A
IDM	Drain Current - Pulsed (Note 1)	240	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	220	mJ
IAR	Avalanche Current (Note 1)	60	A
EAR	Repetitive Avalanche Energy (Note 1)	10.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	100	W
		0.67	W/
TJ , TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQP60N03L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP60N03L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP60N03L is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.