FQP70N10

MOSFET 100V N-Channel QFET

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SeekIC No. : 00157445 Detail

FQP70N10: MOSFET 100V N-Channel QFET

floor Price/Ceiling Price

US $ .51~.68 / Piece | Get Latest Price
Part Number:
FQP70N10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.68
  • $.56
  • $.52
  • $.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 57 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 57 A
Resistance Drain-Source RDS (on) : 0.025 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Features:

* 57A, 100V, RDS(on)  = 0.023  @VGS = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical  150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating



Specifications

Symbol Parameter FQP70N10 Units
VDSS Drain-Source Voltage 100 V
ID
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100)
57 A
40.3 A
IDM Drain Current - Pulsed (Note 1) 228 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy  (Note 2) 1300 mJ
IAR Avalanche Current  (Note 1) 57 A
EAR
Repetitive Avalanche Energy  (Note 1)
16 mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
6.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
160 W
1.06 W/
TJ  , TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

  These N-Channel enhancement mode power field effect transistors of FQP70N10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology FQP70N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP70N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQP70N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C57A
Rds On (Max) @ Id, Vgs23 mOhm @ 28.5A, 10V
Input Capacitance (Ciss) @ Vds 3300pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP70N10
FQP70N10



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