FQP95N03L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.0085 Ohms
Continuous Drain Current : 95 A


Features:

• 95A, 30V, R_DS(on) = 0.0085Ω @V_GS = 10 V
• Low gate charge ( typical 36 nC)
• Low Crss ( typical 240 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP8N80C	Units
VDSS	Drain-Source Voltage	30	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	95	A
		67.2	A
IDM	Drain Current - Pulsed (Note 1)	380	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	400	mJ
IAR	Avalanche Current (Note 1)	95	A
EAR	Repetitive Avalanche Energy (Note 1)	15	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	150	W
		1.0	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP95N03L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQP95N03L has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. FQP95N03L is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.