FQPF10N20

MOSFET 200V N-Ch MOSFET

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FQPF10N20 Picture
SeekIC No. : 00162125 Detail

FQPF10N20: MOSFET 200V N-Ch MOSFET

floor Price/Ceiling Price

Part Number:
FQPF10N20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.8 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.36 Ohms
Continuous Drain Current : 6.8 A


Features:

• 6.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical  13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
FQPF10N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC  = 100°C)
6.8
A
4.3
A
IDM
Drain Current - Pulsed          (Note 1)
27.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy  (Note 2) 
180
mJ
IAR
Avalanche Current               (Note 1)
6.8
A
EAR
Repetitive Avalanche Energy     (Note 1)                                        
4.0
mJ
dv/dt
Peak Diode Recovery dv/dt       (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
                           - Derate above 25°C
 
40
W
 
0.32
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQPF10N20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF10N20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF10N20 is well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.

 




Parameters:

Technical/Catalog InformationFQPF10N20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C6.8A
Rds On (Max) @ Id, Vgs360 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds 670pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs18nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF10N20
FQPF10N20



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