FQT1N80TF_WS, US $ .28-.41 , Fairchild Semiconductor, FQT1N80TF_WS DataSheet download, circuit diagram from SeekIC.com

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FQT1N80TF_WS: MOSFET 800V 0.2A 20Ohm N-Channel

FQT1N80TF_WS Data Sheet

US $ .28~.41 / Piece | Get Latest Price

Part Number:: FQT1N80TF_WS
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	0.2 A
Resistance Drain-Source RDS (on) :	20 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-223	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : SOT-223
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 20 Ohms

Parameters:

Technical/Catalog Information	FQT1N80TF_WS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	20 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds	195pF @ 25V
Power - Max	2.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.2nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQT1N80TF_WS FQT1N80TF_WS FQT1N80TF_WSTR ND FQT1N80TF_WSTRND FQT1N80TF_WSTR

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