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FQT4N20TF

MOSFET 200V Single

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SeekIC No. : 00163308 Detail

FQT4N20TF: MOSFET 200V Single

FQT4N20TF Data Sheet

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Part Number:
FQT4N20TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.85 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-323 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Package / Case : SOT-323
Continuous Drain Current : 0.85 A


Parameters:

Technical/Catalog InformationFQT4N20TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C850mA
Rds On (Max) @ Id, Vgs1.4 Ohm @ 425mA, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max2.2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.5nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQT4N20TF
FQT4N20TF



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