FQT4N25

Features:

• 0.83A, 250V, RDS(on) = 1.75Ω @VGS = 10 V
• Low gate charge ( typical 4.3 nC)
• Low Crss ( typical  4.8 pF)
• Fast switching
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQT7N10	Units
VDSS	Drain-Source Voltage	250	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C)	0.83	A
		0.66	A
IDM	Drain Current - Pulsed (Note 1)	3.3	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
IAR	Avalanche Current (Note 1)	0.83	A
EAR	Repetitive Avalanche Energy (Note 1)	0.25	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	2.5	W
		0.02	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQT4N25 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQT4N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQT4N25 is well suited for high efficiency switching DC/DC converters, switch mode power supply.