FQT4N25TF, US $ .21-.41 , Fairchild Semiconductor, FQT4N25TF DataSheet download, circuit diagram from SeekIC.com

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FQT4N25TF: MOSFET 250V Single

FQT4N25TF Data Sheet

US $ .21~.41 / Piece | Get Latest Price

Part Number:: FQT4N25TF
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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FQT4N20 evaluate
Features: • 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V• Low gate charge ( typical 5...
FQT4N20L evaluate
Features: • 0.85A, 200V, RDS(on) = 1.35Ω @VGS = 10 V• Low gate charge ( typical ...
FQT4N20LTF evaluate
US $.18 - .29 / Piece

MOSFET 200V Single

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	0.83 A
Resistance Drain-Source RDS (on) :	1.75 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-223	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : SOT-223
Continuous Drain Current : 0.83 A
Resistance Drain-Source RDS (on) : 1.75 Ohms

Parameters:

Technical/Catalog Information	FQT4N25TF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	830mA
Rds On (Max) @ Id, Vgs	1.75 Ohm @ 415mA, 10V
Input Capacitance (Ciss) @ Vds	200pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.6nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQT4N25TF FQT4N25TF

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FQT4N25TF

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