Position: Home  > All Categories> Integrated Circuits (ICs) > FQU17N08

FQU17N08

Features: • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD17N08 /FQU17N08 Units VDSS Dra...

product image

FQU17N08 Picture
See larger image
SeekIC No. : 004343355 Detail

FQU17N08: Features: • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Im...

FQU17N08 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQU17N08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical  28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD17N08 /FQU17N08 Units
VDSS Drain-Source Voltage 80 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 12.9 A
8.2 A
IDM Drain Current - Pulsed (Note 1) 51.6 A
VGSS Gate-Source Voltage ±25 V
EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ
IAR Avalanche Current (Note 1) 12.9 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 44 W
0.32 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU17N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU17N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQU17N08 is well suited for low voltage applications such as automotive,high  efficiency switching for DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Prototyping Products
AVT4168
DE1
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Memory Cards, Modules
WT32
VTL5C7
Connectors, Interconnects
ASP-134488-01
WM4078-ND
RF and RFID
X3C26P1-30S
1P620S
View more