FQU19N10

Features: • 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 32 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD19N10 / FQU19N10 Units VDS...

product image

FQU19N10 Picture
SeekIC No. : 004343359 Detail

FQU19N10: Features: • 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 32 pF)• Fast switching• 100% avalanche tested• Improved d...

floor Price/Ceiling Price

Part Number:
FQU19N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

 

Symbol

Parameter

FQD19N10 / FQU19N10

Units

VDSS

Drain-Source Voltage

100

V

ID

Drain Current

- Continuous (TC =25°C)

15.6

A

 

- Continuous (TC = 100°C)

9.8

A

IDM

Drain Current Pulsed (Note 1)

62.4

A

VGSS

Gate-Source Voltage

± 25

V

EAS

Single Pulsed Avalanche Energy (Note 2)

220

mJ

IAR

Avalanche Current (Note 1)

15.5

A

EAR

Repetitive Avalanche Energy (Note 1)

5.0

mJ

d v/dt

Peak Diode Recovery dv/dt (Note 3)

6.0

V/ns

PD

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)

50

W

- Derate above 25°C

0.4

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C




Description

These N-Channel enhancement mode power field effect transistors of FQU19N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU19N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU19N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Memory Cards, Modules
Circuit Protection
Resistors
Programmers, Development Systems
Motors, Solenoids, Driver Boards/Modules
View more