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FQU1N80

Features: • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V• Low gate charge ( typical 5.5nC)• Low Crss ( typical 2.7pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD1N80 / FQU1N80 Units VDSS Drain-S...

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SeekIC No. : 004343364 Detail

FQU1N80: Features: • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V• Low gate charge ( typical 5.5nC)• Low Crss ( typical 2.7pF)• Fast switching• 100% avalanche tested• Impro...

FQU1N80 Data Sheet

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Part Number:
FQU1N80
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V
• Low gate charge ( typical  5.5nC)
• Low Crss ( typical  2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD1N80 / FQU1N80 Units
VDSS Drain-Source Voltage 800 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 1.0 A
0.63 A
IDM Drain Current - Pulsed (Note 1) 4.0 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ
IAR Avalanche Current (Note 1) 1.0 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 45 W
0.36 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU1N80 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU1N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU1N80 is well suited for high efficiency switch mode power supply.




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