FQU20N06LE

Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical 35 pF)Fast switching100% avalanche testedImproved dv/dt capability150 C maximum junction temperature ratingLow level gate drive requirements allowing directoperation form logic driversBuilt-in ESD Pro...

product image

FQU20N06LE Picture
SeekIC No. : 004343368 Detail

FQU20N06LE: Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical 35 pF)Fast switching100% avalanche testedImproved dv/dt capability150 C maximum junction temperature...

floor Price/Ceiling Price

Part Number:
FQU20N06LE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

17.2A, 60V, RDS(on)= 0.06  @ VGS= 10V
Low gate charge ( typical 9.5 nC)
Low Crss ( typical  35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150 C maximum junction temperature rating
Low level gate drive requirements allowing directoperation form logic drivers
Built-in ESD Protection Diode




Specifications

Symbol
Parameter
FQD13N06/FQU13N06
Units
VDSS
Drain-Source Voltage
60
V
ID
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100)
17.2
A
10.9
A
IDM
Drain Current Pulsed  (Note 1)
68.8
A
VGSS
Gate-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy  (Note 2)
170
mJ
IAR
Avalanche Current   (Note 1)
17.2
A
EAR
Repetitive Avalanche Energy  (Note 1)
3.8
mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
7.0
V/ns
PD
Power Dissipation (TA = 25) *
2.5
W
Power Dissipation (TC = 25)
- Derate above 25
38
W
0.30
W/
TJ , TSTG
Operating and Storage Temperature Range
-55 to +150
TL
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

These N-Channel enhancement mode power field effecttransistors of FQU20N06LE are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQU20N06LE has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. FQU20N06LE is wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Batteries, Chargers, Holders
Undefined Category
RF and RFID
Memory Cards, Modules
Inductors, Coils, Chokes
View more