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FQU4N20TU

MOSFET

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SeekIC No. : 00161636 Detail

FQU4N20TU: MOSFET

FQU4N20TU Data Sheet

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Part Number:
FQU4N20TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 3 A


Parameters:

Technical/Catalog InformationFQU4N20TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs6.5nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU4N20TU
FQU4N20TU



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