Position: Home  > All Categories> Integrated Circuits (ICs) > FQU4P25

FQU4P25

Features: • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 10.3 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD4P25 / FQU4P25 Units VDSS D...

product image

FQU4P25 Picture
See larger image
SeekIC No. : 004343385 Detail

FQU4P25: Features: • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 10.3 pF)• Fast switching• 100% avalanche tested•...

FQU4P25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQU4P25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V
• Low gate charge ( typical  10 nC)
• Low Crss ( typical  10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD4P25 / FQU4P25 Units
VDSS Drain-Source Voltage -250 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -3.1 A
-1.96 A
IDM Drain Current - Pulsed (Note 1) -12.4 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) -3.1 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 45 W
0.36 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU4P25 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU4P25 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQU4P25 is well suited for high efficiency switching DC/DC converters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Resistors
A101G
3006P-1-205LF
Optoelectronics
SFH7770
TLP423J
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Memory Cards, Modules
WT32
VTL5C7
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more