MOSFET N-CH/600V/5A/QFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.8 A | ||
| Resistance Drain-Source RDS (on) : | 2 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
| Technical/Catalog Information | FQU5N60CTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU5N60CTU FQU5N60CTU |