FQU6N40C

Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD6N40C /FQU6N40C Units VDSS Drain...

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SeekIC No. : 004343392 Detail

FQU6N40C: Features: • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V• Low gate charge ( typical 16nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Impro...

floor Price/Ceiling Price

Part Number:
FQU6N40C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

•  4.5A, 400V, RDS(on) =   1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter FQD6N40C /FQU6N40C Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
4.5 A
2.7 A
IDM Drain Current - Pulsed (Note 1) 18 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ
IAR Avalanche Current (Note 1) 4.5 A
EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5  V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25
48 W
0.38 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU6N40C are produced using Fairchild's proprietary, planar stripe,  DMOS technology.

    This advanced technology of FQU6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




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