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FQU7N10LTU: MOSFET 100V Single

FQU7N10LTU Data Sheet

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Part Number:: FQU7N10LTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/26

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Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 5.8 nC)&...
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Features: • 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V• Low gate charge ( typical 4.6 nC)&...
FQU7N10TU evaluate
MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5.8 A
Resistance Drain-Source RDS (on) :	0.35 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 0.35 Ohms

Parameters:

Technical/Catalog Information	FQU7N10LTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	290pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU7N10LTU FQU7N10LTU

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