MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CH 100V 5.8A IPAK
| Technical/Catalog Information | FQU7N10LTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 2.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6nC @ 5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQU7N10LTU FQU7N10LTU |
FQU10N20
PDF/DataSheet Download
These N-Channel enhancement mode power field effect transistors of FQU7N10Lare produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching...
These N-Channel enhancement mode power field effect transistors of FQU7N10are produced using Fairchild's proprietary,planar stripe, DMOS technology. This advanced technology of FQU7N10is especially tailored to minimize on-state resistance, provide superior s...
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