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FQU8P10TU

MOSFET -100V Single

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SeekIC No. : 00159543 Detail

FQU8P10TU: MOSFET -100V Single

FQU8P10TU Data Sheet

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Part Number:
FQU8P10TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 6.6 A
Resistance Drain-Source RDS (on) : 0.41 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.41 Ohms
Package / Case : IPAK
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 6.6 A


Parameters:

Technical/Catalog InformationFQU8P10TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C6.6A
Rds On (Max) @ Id, Vgs530 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 470pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU8P10TU
FQU8P10TU



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