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FRM130H

Features: • 14A, 100V, RDS(on) = 0.180• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamma...

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SeekIC No. : 004343673 Detail

FRM130H: Features: • 14A, 100V, RDS(on) = 0.180• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point ...

FRM130H Data Sheet

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Part Number:
FRM130H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 14A, 100V, RDS(on) = 0.180
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma            - Meets Pre-Rad Specifications to 100KRAD(Si)
                          - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
                          - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot     - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
                          - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 1.5nA Per-RAD(Si)/sec Typically
• Neutron           - Pre-RAD Specifications for 3E13 Neutrons/cm2
                          - Usable to 3E14 Neutrons/cm2


Specifications

    FRM130D,R, H UNITS
Drain-Source Voltage VDS 100 V
Drain-Gate Voltage (RGS = 20k) VDGR 100 V
Continuous Drain Current
  TC = +25
  TC = +100		 ID
14
9
A
A
Pulsed Drain Current IDM 42 A
Gate-Source Voltage VGS ±20 V
Maximum Power Dissipation
  TC = +25
  TC = +100
  Derated Above +25		 PT
75
30
0.60
W
W
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM 42 A
Continuous Source Current (Body Diode) IS 14 A
Pulsed Source Current (Body Diode) ISM 42 A
Operating And Storage Temperature TJC, TSTG -55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max TL 300



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