FS50R06KE3

IGBT Modules N-CH 600V 70A

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FS50R06KE3 Picture
SeekIC No. : 00141504 Detail

FS50R06KE3: IGBT Modules N-CH 600V 70A

floor Price/Ceiling Price

US $ 40.21~44.68 / Piece | Get Latest Price
Part Number:
FS50R06KE3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $44.68
  • $40.21
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 600 V Continuous Collector Current at 25 C : 70 A
Maximum Operating Temperature : + 150 C Package / Case : Econo 2    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Configuration : Hex
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Package / Case : Econo 2
Continuous Collector Current at 25 C : 70 A


Description

The FS50R06KE3 is designed as one kind of EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diodes.

About the FS50R06KE3 some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its DC collector current would be 50A at Tc=25°C and would be 70A at Tc=80A. (3)Its repetitive peak collector current would be 100A. (4)Its total power dissipation would be 190W. (5)Its gate to emitter peak voltage would be +/-20V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics about FS50R06KE3 are concluded as follow. (1)Its collector to emitter saturation voltage would be typ 1.45V and max 1.9V at Tj=25°C and would be typ 1.6V at Tj=1.6V and would be typ 1.7V at Tj=150°C. (2)Its gate threshold voltage would be min 4.9V and typ 5.8V and max 6.5V. (3)Its internal gate resistor would be typ 0ohms. (4)Its input capacitance would be typ 3.1pF. (5)Its reverse transfer capacitance would be typ 0.095nF. (6)Its collector to emitter cutoff current would be max 1.0mA. (7)Its gate to emitter leakage current would be max 400nA. (8)Its turn-on delay time (inductive load) would be typ 0.023us. (9)Its rise time inductive load would be typ 0.015us at Tj=25°C and would be typ 0.018us at Tj=125°C and would be typ 0.02us at Tj=150°C. (10)Its turn-off delay time incductive load would be typ 0.18us. (11)Its fall time inductive load would be typ 0.055us. (12)Its turn-on energy loss per pulse would be typ 0.3mJ. (13)Its turn-off energy loss per pulse would be typ 1.3mJ. (14)Its SC data would be yp 350A. (15)Its thermal resistance junction to case would be max 0.8K/W. (16)Its thermal resistance case to heatsink would be typ 0.2K/W. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about FS50R06KE3 please contact us for details. Thank you!




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