FS70UM-2

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 100V
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 125W
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 70A
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Renesas Electronics America
Supplier Device Package: TO-220
Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds: 6540pF @ 10V


Application

Motor control, Lamp control, Solenoid control DC-DC converter, etc.


Specifications

Symbol	Parameter	Conditions	Ratings	Unit
VDSS	Drain-source voltage	VGS = 0V	100	V
VGSS	Gate-source voltage	VDS = 0V	±20	V
ID	Drain current		70	A
IDM	Drain current (Pulsed)		280	A
IDA	Avalanche drain current (Pulsed)	L = 30H	70	A
IS	Source current		70	A
ISM	Source current (Pulsed)		280	A
PD	Maximum power dissipation		125	W
Tch	Channel temperature		-55 ~ +150
Tstg	Storage temperature		-55 ~ +150
--	Weight	Typical value	2.0	g

Parameters:

Technical/Catalog Information	FS70UM-2
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	20 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	6540pF @ 10V
Power - Max	125W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	FS70UM 2 FS70UM2