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FSB660: Transistors Bipolar (BJT) PNP Transistor Low Saturation

FSB660 Data Sheet

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Part Number:: FSB660
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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FSB619 evaluate
US $.08 - .11 / Piece

Transistors Bipolar (BJT) NPN Transistor Low Saturation
FSB619_Q evaluate
Transistors Bipolar (BJT) NPN Transistor Low Saturation
FSB649 evaluate
US $.12 - .26 / Piece

Transistors Bipolar (BJT) NPN Transistor Low Saturation

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	100	Configuration :	Single
Maximum Operating Frequency :	75 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	Super SOT
Packaging :	Reel

Description

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 75 MHz
Package / Case : Super SOT

Specifications

Symbol	Parameter	FSB660/FSB660A	Units
V_CEO	Collector-Emitter Voltage	60	V
V_CBO	Collector-Base Voltage	60	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current - Continuous	2	A
T_J,T_stg	Operating and Storage Junction Temperature Range	-55 to +150

Parameters:

Technical/Catalog Information	FSB660
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	2A
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	350mV @ 200mA, 2A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	Super SOT-3
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FSB660 FSB660

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FSB660

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